HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Typical Performance Curves
(Continued)
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.2
V GS = V DS , I D = 250 μ A
2.5
2.0
1.5
1.0
0.5
0
V GS = 10V, I D = 56A
1.0
0.8
0.6
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
3000
C OSS ≈ C DS + C GD
1.1
1.0
0.9
I D = 250 μ A
2500
2000
1500
1000
500
0
C ISS
C OSS
C RSS
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
-80
-40
0
40
80
120
160
200
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
10
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
0
V DD = 50V
I D = 56A
I D = 37A
I D = 18A
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
?2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. C0
相关PDF资料
A6RS-101RS SMT ROTARY DIP
18620451 LED BAYONET MULTI T3-1/4 28V GRN
805M1-020-01 SENS ACCLRMTR 20G ADHESIVE MT
CR4860-500 TRANSDCR VLTGE 0-500VAC AVRG RMS
564-2210-223F LED CBI 3MM 3X1 GRN,GRN,YLW TINT
805M1-200-01 SENS ACCLRMTR 200G ADHESIVE MT
564-2210-132F LED CBI 3MM 3X1 RED,YLW,GRN TINT
18620450 LED BAYONET MULTI T3-1/4 28V RED
相关代理商/技术参数
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
HUF75639P3_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_Q 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3 功能描述:MOSFET TO-262 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639S3R4851 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET